There was a problem with the connection!
menu
NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Summary Page
One Page Summary
Instruction:
Click on selected Tab for more information.
General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
SiOx/Si
XPS Formula:
Si*Ox
Name:
silicon oxides/silicon
CAS Registry No:
11126-22-0
Class:
anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide
Author Name(s):
Schleich B., Schmeisser D., Gopel W.
Journal:
Surf. Sci. 191, 357
DOI:
10.1016/S0039-6028(87)81184-6
Pub Year:
1987
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
3/2
Binding Energy (eV):
103.30
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Si(111) (p-type, boron doped with 6 Ohm cm resistivity) crystals covered with native oxide (thickness, d=2nm). Coverages were monitored by a quartz crystall oscillator.
Specimen:
thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
Go Back
Home
search
Identify Unknown Spectral Lines
search
Retrieve Data for Elements
keyboard_arrow_down
Selected Spectral Type and Element
Reference Data
search
Retrieve Data for Compounds
keyboard_arrow_down
Elemental Composition
Chemical Name
Chemical Classes
Data for One Element
assessment
Plots
keyboard_arrow_down
Wagner Plot
Chemical Shifts
search
Search Scientific Citations
assignment
More Options
keyboard_arrow_down
Introduction
Data Field Definitions
Citation
Contact
Version History
Acknowledgement
Disclaimer
An error has occurred. This application may no longer respond until reloaded.
Reload
🗙