NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ga

Ti/GaAs

Ti/Ga*As

titanium on gallium arsenide

CAS Registry No:

7440-32-6

arsenide, element, IV-VI semiconductor

Author Name(s):

Ruckman M.W., del Giudice M., Joyce J.J., Weaver J.H.

Phys. Rev. B 33, 2191

Pub Year:

1986

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV):

-1.66

Energy Uncertainty:

0.05

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

30

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Energy Scale Evaluation:

Calibration study

Comment:

60 A Ti/GaAs. GaAs(110) surfaces were obtained by cleaving n-type crystals (Si doped). Ti films were evaporated in situ from a resistively heated W boat. Ti deposition rates and amounts were determined with a quartz-crystal-oscillator.

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