NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Rich D.H., Miller T., Samsavar A., Lin H.F., Chiang T.-C.

Phys. Rev. B 37, 10221

Pub Year:

1988

book All Records in this Publication

Photoelectron Line

Line Designation:

2p_3/2

Binding Energy (eV):

99.54

Energy Uncertainty:

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

140

Overall Energy Resolution (eV):

0.3

Calibration:

FL

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Si(100). The sample Fermi level was determined by observing emission from the Fermi edge of a polycrystalline Au sample in electrical contact with the Si sample. Surface core-level shift derived from analysis of spectra for photo energies of 108 eV and 140 eV.

crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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