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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Sb
Formula:
GaSb
XPS Formula:
GaSb
Name:
gallium stibnide
CAS Registry No:
12064-03-8
Class:
II-VI semiconductor, III-V semiconductor, stibnide
Author Name(s):
Wilke W.G., Horn K.
Journal:
J. Vac. Sci. Technol. B 6, 1211
DOI:
10.1116/1.584281
Pub Year:
1988
book
All Records in this Publication
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d
Surface Core-Level Shift (eV):
-0.39
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaSb(100).
Specimen:
cleaved crystal, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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