NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ta

Ta₂O₅

Ta₂O₅

ditantalum pentoxide

CAS Registry No:

1314-61-0

anhydride, oxide

Author Name(s):

Ohfuji S., Hashomoto C.

J. Vac. Sci. Technol. B 4, 714

Pub Year:

1986

All Records in this Publication

Chemical Shift

Line Designation:

CS-4f_7/2

Chemical Shift (eV):

4.50

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ta films, about 20nm in thickness were deposited by reactive sputtering in a mixture of Ar and H2 gases onto the Si wafers at 300 K. Oxidation of Ta films was carried out using a quartz tube furnace in dry oxygen atmosphere at 673-773 K.

molecular beam epitaxy, oxidizing atmosphere, oxygen pressure, sputter deposited, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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