NIST X-ray Photoelectron Spectroscopy Database

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Al₀.₆Ga₀.₄As

Al₀.₆Ga₀.₄As

aluminum gallium arsenide (Al0.6Ga0.4As)

106804-30-2

arsenide, III-V semiconductor

Hofmann A., Streubel P., Meisel A.

Vacuum 41, 1728

Pub Year:

1990

Photoelectron Line

73.70

data

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The samples were grown by liquid phase epitaxy on Te-doped GaAs (100).