NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Si

La/Si

lanthanum/silicon

CAS Registry No:

element, IV semiconductor, rare earth

Author Name(s):

Puppin E., Guyot H., Shen Z.X., Hwang J., Lindau I.

Solid State Commun. 67, 23

Pub Year:

1988

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p

Chemical Shift (eV):

0.50

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.3 ML La/Si(111). Clean Si(111) surfaces were prepared by cleaving of n-type (resistivity is 36 Ohm cm) single crystal silicon. The amount of deposited La was measured with a quartz microbalance.

amorphous, reacted, thin layer, vapor deposited

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙