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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Baptist R., Pellissier A., Chauvet G.
Journal:
Solid State Commun. 68, 555
DOI:
10.1016/0038-1098(88)90202-5
Pub Year:
1988
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV):
99.60
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
1.0
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The Si n-type or p-type was prepared in situ by conventional procedure until a clean reconstucted Si(111)-(7x7) surface was obtained.
Specimen:
crystal, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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