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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
O
Formula:
SiO
2
/Si
Name:
silicon dioxide/silicon
CAS Registry No:
7631-86-9
Class:
element, IV semiconductor, non-stoichiometric oxide, oxide
Author Name(s):
Contour J.P., Massies J., d'Avitaya F.A.
Journal:
J. Vac. Sci. Technol. B 5, 908
DOI:
10.1116/1.583688
Pub Year:
1987
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV):
532.60
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
LEED 2x1 pattern.
Specimen:
crystal, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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