NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

N₂/(In,Ga)As

(In,Ga)As

nitrogen/indium gallium arsenide

CAS Registry No:

106070-25-1

arsenide, III-V semiconductor, nitride, non-stoichiometric oxide

Author Name(s):

Thomas III J.H., Kaganowicz G., Robinson J.W.

J. Electrochem. Soc. 135, 1201

Pub Year:

1988

book All Records in this Publication

Photoelectron Line

Line Designation:

3d_5/2

Binding Energy (eV):

444.20

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

3E6 L N2/InGaAs. The sample was exposed to N2 plasma for 1 min. The conditions during the exposure were as follows: 50 mTorr pressure, 400 W at 13.56 mHz excitation and 300 K.

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