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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
N
Formula:
Si
3
N
4
Name:
silicon(IV) nitride
CAS Registry No:
12033-89-5
Class:
nitride, silicide
Author Name(s):
Ingo G.M., Zacchetti N., della Sala D., Coluzza C.
Journal:
J. Vac. Sci. Technol. A 7, 3048
DOI:
10.1116/1.576314
Pub Year:
1989
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV):
398.20
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
1.62
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:
Reaction bonded and hot pressed Si3N4 films were prepared by chemical vapour deposition onto Si(100) substrate.
Specimen:
amorphous, annealed, chemical vapor deposition, pelletized, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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