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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Er/Si
XPS Formula:
bulk silicon
Name:
erbium/silicon
CAS Registry No:
7440-21-3
Class:
cluster, element, IV semiconductor, silicide
Author Name(s):
Gokhale S., Mahamuni S., Deshmukh S.V., Rao V.J., Nigavekar A.S., and Kulkarni S.K.
Journal:
Surf. Sci. 237, 127
DOI:
10.1016/0039-6028(90)90525-D
Pub Year:
1990
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV):
99.30
Energy Uncertainty:
0.1
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
200 A Er/Si(111), p-type. The rate of evaporation was monitored by a quartz crystal microbalance and was about 1A/min.
Specimen:
heated, thin layer, vapor deposited
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
473
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