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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
In
Formula:
H
2
/InSb
XPS Formula:
H
2
/InSb bulk component
Name:
hydrogen/indium stibnide
CAS Registry No:
1312-41-0
Class:
III-V semiconductor, stibnide
Author Name(s):
Hinkel V., Sorba L., Horn K.
Journal:
Surf. Sci. 194, 597
DOI:
10.1016/0039-6028(88)90000-3
Pub Year:
1988
book
All Records in this Publication
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d
3/2
Surface Core-Level Shift (eV):
0.46
Energy Uncertainty:
0.02
Background Subtraction Method:
other
Peak Location Method:
Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
35-75
Overall Energy Resolution (eV):
0.28
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
2E5 L H2/InSb(110)-(1x1).
Specimen:
reacted, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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