NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Sb

GaSb

GaSb*

gallium stibnide

CAS Registry No:

12064-03-8

II-VI semiconductor, III-V semiconductor, stibnide

Author Name(s):

Franklin G.E., Rich D.H., Samsavar A., Hirchchorn E.S., Leibsle F.M.,Miller T., et al.

Phys. Rev. B 41, 12619

Pub Year:

1990

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-4d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

-0.41

Energy Uncertainty:

0.01

Background Subtraction Method:

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

1.0575

Lorentzian Width (eV):

0.26

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.2

Calibration:

FL

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree. width is 0.26 eV.

crystal, molecular beam epitaxy, semiconductor, sputtered and heated, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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