NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 8

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaSb

DS-3d

0.45

GaSb

DS-4d

1.25

GaSb

3d_5/2

19.00

GaSb

4d_5/2

31.94

GaSb

SS1-3d_5/2

-0.43

GaSb

SS1-4d_5/2

-0.41

GaSb

SS2-4d

0.40

GaSb

SS2-3d_5/2

0.66

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-3d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms:

0.66

Energy Uncertainty:

0.03

Background Subtraction Method:

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.893

Lorentzian Width (eV):

0.26

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree. width is 0.26 eV.

Specimen:

crystal, molecular beam epitaxy, semiconductor, sputtered and heated, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300