NIST X-ray Photoelectron Spectroscopy Database

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O₂/Si

Si(IV) component of native oxide

silicon oxides (O2/Si)

11126-22-0

IV-VI semiconductor, non-stoichiometric oxide, oxide

Aarnik W.A.M., Weishaupt A., van Silfout A.

Appl. Surf. Sci. 45, 37

Pub Year:

1990

Photoelectron Line

103.20

Shirley

Gaussian

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Cu2p3 = 932.67, Cu L3MM = 334.95

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Native silicon oxide. The oxide thickness is 27+- 1 A.