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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
SiO
2
Name:
silicon dioxide
CAS Registry No:
7631-86-9
Class:
anhydride, catalyst, glass, IV semiconductor, IV-VI semiconductor, mineral, oxide
Author Name(s):
Chao S.S., Takagi Y., Lukovsky G., Pai P., Caster R.C.,Tyler J.T., et al.
Journal:
Appl. Surf. Sci. 26, 575
DOI:
10.1016/0169-4332(86)90128-5
Pub Year:
1986
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV):
103.40
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
2.3
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Ar=241.8
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Thermaly grown SiO2.
Specimen:
insulator, passive oxide, thermal oxide
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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