NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

SiOx/Si

SiO₂/Si*

silicon oxides/silicon (CasNo:7440-21-3)

CAS Registry No:

7440-21-3

anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Yan Y.L., Helfand M.A., Clayton C.R.

Appl. Surf. Sci. 37, 395

Pub Year:

1989

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

99.30

Energy Uncertainty:

0.1

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al, Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The SiO2 film (thickness is 13.5 A) was grown on a Si wafer in rapid thermal processor. The oxidation temperature was 973 K and the reaction time was 30 s.

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