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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Sb
Formula:
Sm/InSb
Name:
samarium/indium stibnide
CAS Registry No:
1312-41-0
Class:
III-V semiconductor, stibnide
Author Name(s):
Trafas B.M., Aldao C.M., Capasso C., Shapira Y., Boscherini F., Vitomirov I.M.
Journal:
Phys. Rev. B 40, 9811
DOI:
10.1103/PhysRevB.40.9811
Pub Year:
1989
book
All Records in this Publication
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d
Surface Core-Level Shift (eV):
-0.49
Energy Uncertainty:
0.02
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
75
Overall Energy Resolution (eV):
0.2
Calibration:
Charge Reference:
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
27 A Sm/Te-doped InSb(110). Evaporation of Sm was measured with a quartz crystal monitor and was about 1 A/min.
Specimen:
reacted film, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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