NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

O₂/GaAs

Ga*₂O₃

oxygen/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Cuberes M.T., Sacedon J.L.

Appl. Phys. Lett. 57, 2794

Pub Year:

1990

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

3.20

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

3.2E4 L O2/GaAs(100)-(4x1). The sample was exposed to oxygen with a simultaneous electron bombardment at 150 eV and 0.6 mA/cm2 current density. The energy shift is referenced to the binding energy of As in GaAs(100)-(4x1).

oxidizing atmosphere, oxygen pressure, reacted film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293

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