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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Se
Formula:
Bi
6
.
5
Ge
25
.
2
Se
68
.
3
XPS Formula:
Bi
6
.
5
Ge
25
.
2
Se*
68
.
3
Name:
bismuth germanium selenium alloy (6.5-25.2-68.3)
CAS Registry No:
Class:
alloy, chalcogenide, glass, IV-VI semiconductor
Author Name(s):
Mytilineou E., Kounavis P., Chao B.S.
Journal:
J. Phys. Cond. Matter 1, 4687
DOI:
10.1088/0953-8984/1/28/018
Pub Year:
1989
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
3p
3/2
Binding Energy (eV):
160.50
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Gold
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Thin films of amorphous chalcogenite alloys were prepared by sputtering in Ar atmosphere. X-ray energy-dispersive spectrometry was utilized to determine the film compositions.
Specimen:
amorphous
Method of Determining Specimen Composition:
Energy Dispersive Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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