NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 13

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

SiCl₄/Si

CS-2p_3/2

0.92

SiCl/Si

CS-2p_3/2

0.94

SiCl₂/Si

CS-2p_3/2

1.89

SiCl₂/Si

CS-2p_3/2

3.13

SiCl/Si

CS-2p_3/2

0.94

SiCl₂/Si

CS-2p_3/2

1.90

SiCl/Si

CS-2p_3/2

2.72

SiCl/Si

CS-2p_3/2

3.13

SiCl/Si

CS-2p_3/2

0.97

SiCl₂/Si

CS-2p_3/2

1.72

SiCl/Si

CS-2p_3/2

0.94

SiCl/Si

CS-2p_3/2

0.88

SiCl₂/Si

CS-2p_3/2

1.65

Chemical Shift

CS-2p_3/2

0.92

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

0.1

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Silicon was heated in vac. to 1323K to remove the native oxide layer and then cooling slowly to 300K. 0.35 ML (or 1E4 L) SiCl4/Si(111)-(7x7), n-doped with 1 Ohm cm resistivity. The energy is referenced to the bulk state of the Si2p line

Specimen:

adsorbed, native oxide, surface coverage from 0ML to 1ML (0ML < coverage < 1ML), thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

293