NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ir

IrSi₁.₆

Ir*Si₁.₆

iridium silicide (IrSi1.6)

CAS Registry No:

IV-VI semiconductor, silicide

Author Name(s):

Wittmer M., Oelhafen P., Tu K.N.

Phys. Rev. B 33, 5391

Pub Year:

1986

book All Records in this Publication

Photoelectron Line

Line Designation:

4f_7/2

Binding Energy (eV):

61.30

Energy Uncertainty:

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

1.2

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Emission angle is 15 degrees.. Ir/Si films were prepared in 2 ways: 1)coevaporation Ir and Si in a dual e-beam system; 2)evaporation of Ir films. In films on Si(100) wafers, there was annealing in helium furnace at 873 K. Asymmetry parameter is 1.1 in both cases.

annealed, crystal, thick film, vapor deposited

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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