NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Ge/Si

Ge/Si*

germanium/silicon(CasNo:7440-21-3)

CAS Registry No:

7440-21-3

element, IV-VI semiconductor

Author Name(s):

Miller T., Hsieh T.C., Chiang T.-C.

Phys. Rev. B 33, 6983

Pub Year:

1986

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV):

0.61

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.940

Lorentzian Width (eV):

0.182

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

0.4

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

6 ML Ge/n-type Si(111)-(7x7). The thickness was determined by quartz-crystal thickness monitor. Braching ratio of the bulk and the surface component are 0.509 and 0.529, respectively. Surface shift = -0.365. Surface core-level shift derived from analysis of spectra for photon energies of 108 eV and 130 eV

crystal, semiconductor, thin layer, vapor deposited

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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