NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Ge

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Miller T., Hsieh T.C., Chiang T.-C.

Phys. Rev. B 33, 6983

Pub Year:

1986

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-3d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms:

0.77

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.8343

Lorentzian Width (eV):

0.148

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

90

Overall Energy Resolution (eV):

0.4

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ge(111)-c(2x8). Branching ratio of the bulk and the surface components are 0.489 and 0.626, respectively. Surface shift1 = 0.268 eV and surface shift2 = 0.770. Surface core-level shift derived from analysis of spectra for photon energies of 40 eV and 90 eV.

crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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