NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

Cu₂₅.₆In₂₄.₄Se₅₀/SiO₂

copper indium selenium ss/silicon dioxide(Cu25.6In24.4Se50/SiO2)

CAS Registry No:

chalcogenide, IV semiconductor, solid solution

Author Name(s):

Kohiki S., Nishitani M., Negami T., Wada T.

Phys. Rev. B 45, 9163

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

3d_5/2

Binding Energy (eV):

444.80

Energy Uncertainty:

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag = 84.00,368.27

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type CuInSe film with a conductivity of 1.9E1 ohm-1 cm-1 was deposited onto quartz substrate at substrate temperatures ranging from 670 K to 770 K. Chalcopyrite structure. The composition was determined by EPMA and inductively coupled plasma-optical-emi

molecular beam epitaxy, polycrystalline, scraped, semiconductor, thick film

Method of Determining Specimen Composition:

Electron-Probe Microanalysis

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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