NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 12

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

Cu₂₉.₁In₂₂.₄Se₄₈.₅/SiO₂

L₃MM

1307.30

Cu₂₄.₃In₂₅.₈Se₄₉.₉/SiO₂

L₃MM

1307.30

Cu₂₃.₄In₂₆.₅Se₅₀.₁/SiO₂

L₃MM

1307.30

Cu₂₅.₆In₂₄.₄Se₅₀/SiO₂

L₃MM

1307.30

Cu₂₄.₃In₂₅.₈Se₄₉.₉/SiO₂

54.40

Cu₂₄.₃In₂₅.₈Se₄₉.₉/SiO₂

3d_5/2

444.60

Cu₂₅.₆In₂₄.₄Se₅₀/SiO₂

3d_5/2

444.80

Cu₂₅.₆In₂₄.₄Se₅₀/SiO₂

54.50

Cu₂₃.₄In₂₆.₅Se₅₀.₁/SiO₂

3d_5/2

446.60

Cu₂₃.₄In₂₆.₅Se₅₀.₁/SiO₂

54.30

Cu₂₉.₁In₂₂.₄Se₄₈.₅/SiO₂

3d_5/2

444.80

Cu₂₉.₁In₂₂.₄Se₄₈.₅/SiO₂

54.50

Photoelectron Line

54.30

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag = 84.00,368.27

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type CuInSe film with a conductivity of 4.0E-5 ohm-1 cm-1 was deposited onto quartz substrate at substrate temperatures ranging from 670 K to 770 K. Chalcopyrite structure. The composition was determined by EPMA and inductively coupled plasma-optical-em

Specimen:

molecular beam epitaxy, polycrystalline, scraped, semiconductor, thick film

Method of Determining Specimen Composition:

Electron-Probe Microanalysis

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300