NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Ge

upper atoms in asymmetric dimers

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Le Lay G., Kanski J., Nilsson P.O., Karlsson U.O.

Appl. Surf. Sci. 56, 178

Pub Year:

1992

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

-0.60

Energy Uncertainty:

0.05

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.35

Lorentzian Width (eV):

0.15

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

75

Overall Energy Resolution (eV):

0.30

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type doped Ge(100)c(2x1). The sample was cleaned by Ar+ ion bombardment at 773 K and subsequently annealed (T = 973 K). Emission angle = 60 degrees. Background was subtracted using clean surface spectrum.

adsorbed, cooled, crystal, semiconductor, thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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