NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Element:

TaSi₂

Ta*Si₂

tantalum disilicide

12039-79-1

IV-VI semiconductor, silicide

Author Name(s):

Thomas III J.H., Hammer L.H.

Journal:

J. Electrochem. Soc. 136, 2004

DOI:

Pub Year:

1989

book All Records in this Publication

Photoelectron Line

4f_7/2

22.30

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu=84.00,932.67, Pd3d5=335.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with three-point correction of energy scale

Comment:

Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm.

Specimen:

sputter deposited, thin film

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300