NIST X-ray Photoelectron Spectroscopy Database

Click the column to sort in ascending or descending order.
Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
Click on the hyperlink in the column for more information.

Total Records: 8

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

O₂/Al₀.₆Ga₀.₄As

74.90

Al₀.₆Ga₀.₄As

73.70

O₂/Al₀.₆Ga₀.₄As

74.90

O₂/Al₀.₆Ga₀.₄As

73.70

Al₀.₆Ga₀.₄As

73.70

Al₀.₃Ga₀.₇As

73.70

O₂/Al₀.₃Ga₀.₇As

74.90

O₂/Al₀.₆Ga₀.₄As

74.90

Photoelectron Line

74.90

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1E6-1E9 L O2/Al0.6Ga0.4As. The substrate was cleaned by chemical etching in an ammonia solution and by cycles of Ar+ ion bombardment (Ep = 400 eV, Ip = 4 micro ampere, time = 30 min) and annealing (T = 670 K, time = 30 min).

Specimen:

oxygen pressure, semiconductor, solid sample mounted on tape

Method of Determining Specimen Composition:

Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300