NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 36

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

CdTe

DS-4d

0.66

CdTe

DS-4d

1.46

CdTe

DS-4d

0.66

CdTe

DS-4d

1.48

CdTe

DS-4d

1.47

CdTe

DS-4d

0.67

Sb/CdTe

DS-4d

0.65

Sb/CdTe

DS-4d

1.47

Sb/CdTe

DS-4d

1.26

Sb/CdTe

DS-4d

0.65

Sb/CdTe

DS-4d

1.48

Sb/CdTe

DS-4d

1.24

Sb/CdTe

INT-4d_5/2

0.55

Sb/CdTe

4d_5/2

11.15

Sb/CdTe

4d_5/2

32.16

Sb/CdTe

4d_5/2

11.03

Sb/CdTe

4d_5/2

40.31

Sb/CdTe

4d_5/2

40.42

Sb/CdTe

4d_5/2

32.88

CdTe

4d_5/2

11.18

CdTe

4d_5/2

39.82

CdTe

4d_5/2

40.45

CdTe

4d_5/2

10.54

CdTe

4d_5/2

11.15

CdTe

4d_5/2

40.43

CdTe

SS-4d_5/2

1.00

CdTe

SS1-4d_5/2

0.60

CdTe

SS1-4d_5/2

0.58

CdTe

SS1-4d_5/2

0.57

Sb/CdTe

SS1-4d_5/2

0.59

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-4d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

0.58

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.39

Lorentzian Width (eV):

0.23

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.3

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type CdTe(100)-(2x1),in-doped with resistivity of 2E8 Ohm cm. Several cycles of sputtering with 500 eV Ar+ ions and annealing at 598 K were performed to get a good 2x1 surfure. Energy is referenced to the bulk state of Cd4d5/3 line. Branching ratio is 0.59.