NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Cd

CdTe

Cd*Te surface shift

cadmium telluride

CAS Registry No:

1306-25-8

chalcogenide, II-VI semiconductor, IV-VI semiconductor, telluride

Author Name(s):

John P., Leibsle F.M., Miller T., Hsieh T.C., Chiang T.-C.

Superlattices and Microstructures 3, 347

Pub Year:

1987

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-4d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

0.57

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.42

Lorentzian Width (eV):

0.22

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

52

Overall Energy Resolution (eV):

0.3

Calibration:

FL

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type CdTe(100)-(2x1),in-doped with resistivity of 2E8 Ohm cm. MBE generated surfaces were obtained by growing CdTe on the clean sputter/anneal 2x1 surface. Branching ratio is 0.67. energy is referenced to the bulk state of the Cd4d5/3 line

crystal, molecular beam epitaxy, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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