NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Cd

Sb/CdTe

Sb/Cd*Te surface shift

antimony/cadmium telluride

CAS Registry No:

7440-36-0

element, IV-VI semiconductor, telluride

Author Name(s):

John P., Leibsle F.M., Miller T., Hsieh T.C., Chiang T.-C.

Superlattices and Microstructures 3, 347

Pub Year:

1987

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-4d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

0.59

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.40

Lorentzian Width (eV):

0.23

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

52

Overall Energy Resolution (eV):

0.3

Calibration:

FL

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

10 L Sb/n-type CdTe(100)-(2x2),in-doped with 2E8 Ohm cm. MBE generated surfure was obtained by growing on clean sputter/anneal 2x1 surfure with substrate at 573 K and annealed at 548 K. Branching ratio is 0.59. Energy is referenced to bulk state of Cd4d5/3 line.

annealed, crystal, heated, molecular beam epitaxy, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

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