Overall Energy Resolution (eV):
Calibration:
Au,Cu=84.00,932.67, Pd3d5=335.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with three-point correction of energy scale
Comment:
Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm. The stoichiometry of the tantalum silicide was determined by RBS.
native oxide, sputter deposited, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300