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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
As
Formula:
O
2
/GaAs
XPS Formula:
O
2
/Ga*As
Name:
molecular oxygen on gallium arsenide
CAS Registry No:
7782-44-7
Class:
arsenide, element, IV-VI semiconductor
Author Name(s):
Lu Q.B., Pan Y.-X., Gao H.
Journal:
J. Appl. Phys. 68, 634
DOI:
10.1063/1.346791
Pub Year:
1990
book
All Records in this Publication
Data Type:
Chemical Shift
Line Designation:
CS-3d
Chemical Shift (eV):
1.40
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.8
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5E7 L O2/GaAs(100), single crystal Zn-doped to ~1E19 cm-3
Specimen:
oxidizing atmosphere, oxygen pressure
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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