NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Ti/Si

solid solution phase of Si in Ti

titanium/silicon

CAS Registry No:

7440-21-3

element, silicide, solid solution

Author Name(s):

Chambers S.A., Hill D.M., Xu F., Weaver J.H.

Phys. Rev. B 35, 634

Pub Year:

1987

book All Records in this Publication

Interface Core-Level Shift

Line Designation:

INT-2p_3/2

Interface Core-Level Shift:

-1.10

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

7 - 100 A Ti/Si(111)-(7x7). The substrate was chemically etched, Ar+ ion sputtered, and annealed (T = 1273 K). Branching ratio = 0.52. The total FWHM is 0.45 eV. The spectra were recorded at normal emission. The intensity ratio of the Gaussian/Lorentzian

reacted, semiconductor, thin layer, vapor deposited, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

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