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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
SiC
1
.
5
Name:
silicon carbide(SiC1.5)
CAS Registry No:
130680-01-2
Class:
carbide
Author Name(s):
Delplancke M.P., Powers J.M., Vandentop G.J., Salmeron M., Somorjai G.A.
Journal:
J. Vac. Sci. Technol. A 9, 450
DOI:
10.1116/1.577431
Pub Year:
1991
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV):
100.00
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The film was prepared at 333 K.
Specimen:
chemical vapor deposition, crystal, thin film
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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