Reliable (reported energy within 300 eV of a reference energy)
Comment:
1 ML Sb/n-type Si(100)-(1x1). The surface was prepared by depositing several monolayers of Sb on the clean Si(100) surface and then annealing at 773 K. Peak locations: Voigt function. Branching ratio = 0.5. The intensity ratio of the surface/bulk componen