NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Yang X., Cao R., Terry J., Pianetta P.

J. Vac. Sci. Technol. B 10, 2013

Pub Year:

1992

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV):

0.61

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

125

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Si(100)-(2x1). The wafer was chemically precleaned and etched with HF, and cleaned by baking (T = 873 K , time = 1 h) and heating (T = 1223 K). Peak locations: Voigt function. Branching ratio = 0.5.

crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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