NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

As

In₀.₃Ga₀.₇As/InP

gallium indium arsenide ss/indium phosphide(In0.3Ga0.7As/InP)

CAS Registry No:

arsenide, III-V semiconductor, solid solution

Author Name(s):

Erickson J.W., Theis W.M., Cole T., Green A.K., Rehn V.

Surf. Sci. 274, 363

Pub Year:

1992

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-3d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms:

-0.60

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.44

Lorentzian Width (eV):

0.21

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

100

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

80 A InGaAs/InP(100)-(4x2). Coherently strained film was grown at 850 - 860 K. The sample was decapped by heating to about 650 K. The Gaussian width is an intrinsic one. The intensity ratio of the surface/bulk components was 0.76. Branching ratio = 0.67.

annealed, crystal, molecular beam epitaxy, semiconductor, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙