NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Zn

ZnTe/GaSb

zinc telluride/gallium stibnide

CAS Registry No:

1315-11-3

chalcogenide, II-VI semiconductor, III-V semiconductor, stibnide, telluride

Author Name(s):

Yu E.T., Phillips M.C., McCaldin J.O., McGill T.C.

J. Vac. Sci. Technol. B 9, 2233

Pub Year:

1991

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Total Records: 4

Photoelectron Line

Line Designation:

3d

Binding Energy (eV):

9.42

Energy Uncertainty:

0.04

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

275 A ZnTe/p-type GaSb with a carrier concentration of ~ 1E17 cm-3. The film was deposited at a substrate temperature of 543 K.

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