NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Element:

Formula:

ZnTe/GaSb

Name:

zinc telluride/gallium stibnide

CAS Registry No:

1315-11-3

Class:

chalcogenide, II-VI semiconductor, III-V semiconductor, stibnide, telluride

Author Name(s):

Yu E.T., Phillips M.C., McCaldin J.O., McGill T.C.

Journal:

J. Vac. Sci. Technol. B 9, 2233

DOI:

Pub Year:

1991

book All Records in this Publication

Photoelectron Line

9.42

0.04

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

275 A ZnTe/p-type GaSb with a carrier concentration of ~ 1E17 cm-3. The film was deposited at a substrate temperature of 543 K.

Specimen:

crystal, molecular beam epitaxy, semiconductor, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300