NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 6

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

SiO₂/Si

99.37

SiO₂/Si

103.41

SiO₂/Si

99.50

SiO₂/Si

103.22

SiO₂/Si

99.92

SiO₂/Si

103.67

Photoelectron Line

99.50

0.05

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

19 A thick SiO2 formed on the 5% HF etched n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3 by boiling in redistilled H2O for 1 min. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K) by t