Reliable (reported energy within 300 eV of a reference energy)
Comment:
19 A thick SiO2 formed on the 5% HF etched n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3 by boiling in redistilled H2O for 1 min. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K) by t