NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Element:

Formula:

Pd/SiC

Name:

palladium/silicon carbide

CAS Registry No:

409-21-2

Class:

carbide, IV semiconductor

Author Name(s):

Waldrop J.R., Grant R.W., Wang Y.C., Davis R.F.

Journal:

J. Appl. Phys. 72, 4757

DOI:

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

282.52

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

~20-35 A Pd/6H polytype of hexagonal n-type alpha-SiC(000-1)-(1x1). The sample was heated to 873 K for a short time.

Specimen:

chemical vapor deposition, reacted, vapor deposited and heated

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300