NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs₀.₈₇

gallium arsenide(GaAs0.87)

CAS Registry No:

arsenide, III-V semiconductor

Photoelectron Line

Line Designation:

3d_5/2

Binding Energy (eV):

40.70

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

1.21

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The GaAs(110) wafer was initially degreased and wet etched in H2SO4:H2O2:H2O (5:1:1). The surface oxide was removed in situ by annealing (T = ~ 825 K, time > 20 min). Emission angle = 50 degrees. Branching ratio = 0.68.

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