NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Mesarwi A., Ignatiev A.

Surf. Sci. 244, 15

Pub Year:

1991

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

99.40

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by cycles of Ar+ ion bombardment (Ep = 1 keV, j = 5 microamperes cm-2, time = 30 min) and annealing (T = 1123 K, time = 5 min) by indirect electron bombardment.

crystal, semiconductor

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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