NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ga

GaAsOx/GaAs

Ga₂O₃

gallium arsenide oxides/gallium arsenide

CAS Registry No:

arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Cuberes M.T., Sacedon J.L.

Surf. Sci. 251, 92

Pub Year:

1991

book All Records in this Publication

Chemical Shift

Line Designation:

CS-3d

Chemical Shift (eV):

0.90

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5.2 A GaAsOx was grown by electron stimulated oxidation on Si-doped GaAs(100). The energy is referenced to the bulk state of the Ga3d line. The thickness was determined by XPS.

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