NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAsOx/GaAs

CS-3d

3.20

Si/GaAsOx/GaAs

CS-2p_3/2

3.20

Si/GaAsOx/GaAs

CS-2p_3/2

3.20

GaAsOx/GaAs

CS-2p_3/2

3.20

GaAsOx/GaAs

CS-3d

0.90

Si/GaAsOx/GaAs

CS-2p_3/2

0.90

Si/GaAsOx/GaAs

CS-2p_3/2

0.90

GaAsOx/GaAs

CS-2p_3/2

0.90

Si/GaAsOx/GaAs

CS-2p

3.40

Si/GaAsOx/GaAs

CS-2p

3.40

Chemical Shift

CS-2p

3.40

Background Subtraction Method:

Linear

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.6, 3.2 and 10 A Si/5.2 A GaAsOx /Si-doped GaAs(100). GaAsOx was grown by electron stimulated oxidation on GaAs(100). There was a state of pure Si in the spectrum. The thickness was determined by XPS.