NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Tm/Si

bulk state

thulium/silicon

CAS Registry No:

element, lanthanide, rare earth, silicide

Author Name(s):

Gokhale S., Mahamuni S., Joshi K., Nigavekar A.S., Kulkarni S.K.

Surf. Sci. 257, 157

Pub Year:

1991

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

99.00

Energy Uncertainty:

0.1

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

65 A and 125 A Tm/p-Si(111). The Si wafer was cleaned by Ar+ ion bombardment and subsequently annealed (T = 1100 K). The total FWHM is 1.3 eV. The intensity ratio of the Gaussian/Lorentzian components was 80/20. The thickness was measured using a quartz-

crystal, semiconductor, vapor deposited, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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