Reliable (reported energy within 300 eV of a reference energy)
Comment:
125 A thick Tm film was deposited onto p-Si(111) wafer and annealed (T = 673 K) in situ. The Si wafer was cleaned by Ar+ ion bombardment and subsequently annealed (T = 1100 K). The total FWHM is 1.5 eV. The intensity ratio of the Gaussian/Lorentzian com